Variation of crystallite size of al1-xInxN for different values of x and band gap

Naik, V. and Naik, R. and Somashekarappa, H. and Mahesh, S. S. and Somashekar, R. (2006) Variation of crystallite size of al1-xInxN for different values of x and band gap. Bulletin of Materials Science, 29 (1). pp. 29-34. ISSN 0973-7669

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Official URL: https://doi.org/10.1007/BF02709352

Abstract

By using wide angle X-ray scattering (WAXS) technique, we have characterized the epitaxial Al1-xInxN films (thickness, 150 nm) with 0 <x < 1 grown by plasma source molecular beam epitaxy on sapphire (0001) at the low substrate temperature of 375°C, by computing the crystallite size in these samples. We observe that the crystallite size decreases with increase in the concentration of indium and that the band gap in these samples has a direct correlation with the crystallite size.

Item Type: Article
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: LA manjunath user
Date Deposited: 27 Aug 2019 11:02
Last Modified: 27 Aug 2019 11:02
URI: http://eprints.uni-mysore.ac.in/id/eprint/7163

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