Reddy, V. R. and Kim, S. H. and Song, J. O. and Seong, T. Y. (2004) Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN. Solid-State Electronics, 48 (9). pp. 1563-1568. ISSN 0038-1101
Full text not available from this repository. (Request a copy)Abstract
Thermally stable ohmic contact to moderately doped p-GaN:Mg (1.13 x 10(17) cm(-3)) have been investigated using Pt (20 nm)/Re (30 nm)/Au (80 nm) metallization scheme. It is shown that annealing the samples at 600 degreesC for 1 min in a N-2 ambient improves the I-V characteristics of the as-deposited contact. The 600 degreesC contact produces a specific contact resistance of 1.4 x 10(-3) Omega cm(2). However, annealing at 800 degreesC results in the degradation of the I-V characteristics. It is further shown that the surface morphology of the contact annealed at 600 degreesC is very smooth with a root-mean-square roughness of 1.4 nm and that the contact resistivity of the sample annealed at 600 degreesC for 30 min is comparable to that of the 1 min annealed sample. Glancing angle X-ray diffraction and Auger electron microscopy are used to characterise the interfacial reactions between the Pt/Re/Au layers and the p-GaN and hence to understand the annealing dependence of ohmic behaviour. (C) 2004 Elsevier Ltd. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | electrical properties; ohmic contacts; spectroscopy; glancing angle X-ray diffraction; p-GaN |
| Subjects: | D Physical Science > Electronic |
| Divisions: | Department of > Electronics |
| Depositing User: | Users 23 not found. |
| Date Deposited: | 03 Sep 2019 12:10 |
| Last Modified: | 03 Sep 2019 12:10 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6553 |
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