Ramesh, C. K. and Reddy, V. R. and Choi, CJ (2004) Electrical characteristics of molybdenum Schottky contacts on n-type GaN. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 112 (1). pp. 30-33. ISSN 0921-5107
Full text not available from this repository. (Request a copy)Abstract
The Schottky barrier heights of molybdenum (Mo) on n-GaN were investigated as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V techniques. The Schottky barrier height of the as-deposited Mo/n-GaN was found to be 0.81 eV (I-V) and 1.02 eV (C=V), respectively. However, both measurements indicate that the barrier height slightly decreases upon annealing at 400 degreesC for 1 min in nitrogen ambient. The barrier. height of Mo/n-GaN Schottky contacts at 400 degreesC was determined to be 0.74 and 0.92 eV, respectively. Further, an increase in annealing temperature up to 600 degreesC, decreased the barrier height to 0.56 and 0.73 eV The Mo Schottky contact was also shown to be fairly stable during annealing at 400 degreesC. (C) 2004 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Schottky barrier height; Mo/n-GaN Schottky diode; I-V and C-V techniques |
| Subjects: | D Physical Science > Electronic |
| Divisions: | Department of > Electronics |
| Depositing User: | Users 23 not found. |
| Date Deposited: | 03 Sep 2019 10:14 |
| Last Modified: | 03 Sep 2019 10:14 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/6544 |
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