The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN

Reddy, V. Rajagopal and Reddy, N. Ramesha and Choi, Chel-Jong (2006) The effect of annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN. Semiconductor Science and Technology, 21 (12). pp. 1753-1757. ISSN 1361-6641

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Abstract

The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 1017 cm−3) has been investigated by current–voltage (I–V), capacitance–voltage (C–V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I–V) and 0.62 eV (C–V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 °C, reaching maximum values of 0.84 eV (I–V) and 1.05 eV (C–V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 °C and 500 °C.

Item Type:	Article
Subjects:	D Physical Science > Electronic
Divisions:	Department of > Electronics
Depositing User:	LA manjunath user
Date Deposited:	12 Aug 2019 05:53
Last Modified:	12 Aug 2019 05:53
URI:	http://eprints.uni-mysore.ac.in/id/eprint/6255

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