Praveen, K. C. and Pushpa, N. and Naik, P. S. and Cressler, John D. and Tripathi, Ambuj and Gnana Prakash, A. P. (2012) Application of a Pelletron accelerator to study total dose radiation effects on 50GHz SiGe HBTs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 43 - 46. ISSN 0168-583X
Full text not available from this repository. (Request a copy)Abstract
We have investigated the effects of 50MeV lithium ion irradiation on the DC electrical characteristics of first-generation silicon–germanium heterojunction bipolar transistors (50GHz SiGe HBTs) in the dose range of 600krad to 100Mrad. The results of 50MeV Li3+ ion irradiation on the SiGe HBTs are compared with 63MeV proton and Co-60 gamma irradiation results in the same dose range in order to understand the damage induced by different LET species. The radiation response of emitter–base (EB) spacer oxide and shallow trench isolation (STI) oxide to different irradiation types are discussed in this paper. We have also focused on the efficacy in the application of a Pelletron accelerator to study total dose irradiation studies in SiGe HBTs.
| Item Type: | Article |
|---|---|
| Additional Information: | 20th International Conference on Ion Beam Analysis |
| Uncontrolled Keywords: | SiGe HBT, Ion irradiation, Proton and gamma irradiation, EB spacer oxide, STI oxide |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 23 Jul 2019 05:59 |
| Last Modified: | 23 Jul 2019 05:59 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/5458 |
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