Pushpa, N. and Praveen, K. C. and Gnana Prakash, A. P. and Naik, P. S. and Cressler, John D. and Gupta, S. K. and Revannasiddaiah, D. (2012) Reliability studies on NPN RF power transistors under swift heavy ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273. 36 - 39. ISSN 0168-583X
Full text not available from this repository. (Request a copy)Abstract
NPN RF power transistors were irradiated with 140MeV Si10+ ions, 100MeV F8+ ions, 50MeV Li3+ ions and Co-60 gamma radiation in the dose range from 100krad to 100Mrad. The transistor characteristics are studied before and after irradiation from which the parameters such as Gummel characteristics, excess base current (ΔIB=IBpost−IBpre), dc current gain (hFE), transconductance (gm) and collector-saturation current (ICSat) are determined. The degradation observed in the electrical characteristics is almost the same for different types of ion irradiated NPN RF power transistors with similar total doses although there is a large difference in the linear energy transfer (LET) of the ions. Further, it was observed more degradation in DC I–V characteristics of ion irradiated devices than the Co-60 gamma irradiated devices for higher doses.
| Item Type: | Article |
|---|---|
| Additional Information: | 20th International Conference on Ion Beam Analysis |
| Uncontrolled Keywords: | BJT, Ion irradiation, Co-60 gamma radiation, Excess base current, Transconductance |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | C Swapna Library Assistant |
| Date Deposited: | 23 Jul 2019 05:54 |
| Last Modified: | 23 Jul 2019 05:54 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/5456 |
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