Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors

Pradeep, T. M. and Hegde, Vinayakprasanna N. and Pushpa, N. and Bhushan, K. G. and Gnana Prakash, A. P. (2018) Comparison of 5 MeV proton and 1 MeV electron irradiation on silicon NPN rf power transistors. Indian Journal of Pure & Applied Physics, 56. pp. 646-649. ISSN 0019-5596

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Abstract

The total dose effects of 5 MeV protons and 1 MeV electrons on the dc electrical characteristics of silicon NPN transistors have been investigated in the dose range from 1 Mrad(Si) to 100 Mrad(Si). The different electrical characteristics such as Gummel characteristics, excess base current (IB), dc current gain (hFE), transconductance (gm) and output characteristics have been studied in situ as a function of total dose. A considerable increase in base current (IB) and a decrease in hFE, gm and ICSat have been observed after 5 MeV proton and 1 MeV electron irradiation. The results show that there is more degradation in the I-V characteristics of 5 MeV proton irradiated devices when compared to 1 MeV electron irradiation. The degradation in the observed electrical characteristics of the transistors is mainly due to generation-recombination (G-R) centers created in emitter–base (E-B) spacer oxide (SiO2) and displacement damage in the bulk of the transistor structure. In addition to G-R centers, high energy protons can also create various types of defects in the transistor structure.

Item Type:	Article
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	Manjula P Library Assistant
Date Deposited:	18 Jul 2019 07:27
Last Modified:	18 Jul 2019 07:27
URI:	http://eprints.uni-mysore.ac.in/id/eprint/5341

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