Praveen, K. C. and Pushpa, N. and Rao, Y. P. Prabakara and Govindaraj, G. and Cressler, John D. and Gnana Prakash, A. P. (2010) Application of advanced 200GHz Si–Ge HBTs for high dose radiation environments. Solid-State Electronics, 54 (12). 1554 - 1560. ISSN 0038-1101
Full text not available from this repository. (Request a copy)Abstract
Third generation 200 GHz silicon–germanium Heterojunction Bipolar Transistors (Si–Ge HBTs) were irradiated with high dose Co-60 gamma radiation up to 100 Mrad. Pre-radiation and post-radiation DC figures of merits were used to quantify the radiation tolerance of the different geometry devices. The different electrical characteristics like Gummel measurements, excess base current, current gain, transconductance, neutral base recombination, avalanche multiplication of carriers and output characteristics were studied for different doses from 100 krad to 100 Mrad of total doses. The Si–Ge HBTs showed robust ionizing radiation tolerance up to a total dose of 100 Mrad.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Si–Ge HBT, High dose gamma irradiation, G/R traps, E–B spacer oxide, STI oxide, Transconductance |
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | LA manjunath user |
| Date Deposited: | 04 Jul 2019 11:35 |
| Last Modified: | 11 Dec 2019 10:19 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/4603 |
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