5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors

Gnana Prakash, A. P. and Hegde, Vinayakprasanna N. and Pradeep, T. M. and Pushpa, N. and Bajpai, P. K. and Patel, S. P. and Trivedi, Tarkeshwar and Cressler, J. D. (2017) 5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors. Radiation Effects and Defects in Solids, 172 (11-12). pp. 922-930. ISSN 1029-4953

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Abstract

ABSTRACTThe total dose effects of 5 MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100 Mrad on advanced 200 GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5 MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100 Mrad for both radiations.

Item Type:	Article
Uncontrolled Keywords:	Sige HBTs, proton irradiation, 60Co gamma, EB spacer oxide, STI oxide, current gain degradation, isochronal annealing
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	C Swapna Library Assistant
Date Deposited:	19 Jun 2019 05:06
Last Modified:	19 Jun 2019 05:06
URI:	http://eprints.uni-mysore.ac.in/id/eprint/3380

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