Vinay Kumara, M. and Verma, Shammi and Asokan, K. and Shobhad, V. and Karanth, S. P. and Krishnavenia, S. (2016) In situ electrical characteristics of 150 mev ag9+ ion beam induced damage in SI photo detector. ECS Journal of Solid State Science and Technology, 5 (2). pp. 384-388.
Full text not available from this repository. (Request a copy)Abstract
The effect of 150 MeV Ag9+ ion irradiation on electrical characteristics of Si photo detectors has been analyzed through in-situ Current voltage (I-V) and Capacitance voltage (C-V) measurements. Ideality factor (n), series resistance (Rs) and reverse leakage current (IR) are extracted from I-V characteristics. The value of n for pristine detector is found to be 1.24 and it has increased gradually along with the fluence. The value of IR for pristine is found to be 4.97 × 10−8 A and it increases to about three orders of magnitude at the fluence of 1 × 1013 ions/cm2 and further there is no observable change. Also, C-V characteristics exhibit considerable degradation. The value of capacitance decreased from 1.13 ×10−8 F to 3.97 × 10−10 F and also carrier concentration (NA) undergoes slight decrease with the increase in fluence. The 150 MeV Ag9+ ion induced displacements, vacancies in the bulk region mainly attribute to the observed degradation in the electrical characteristics. The ionization and displacement damage profiles were estimated from SRIM/TRIM (Stopping power and Range of Ion in Matter/Transport and Range of Ion in Matter) simulation codes. The observed degradations are explained in terms of TID (total ionization dose) and Dd (displacement damage dose).
| Item Type: | Article |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Department of > Physics |
| Depositing User: | Manjula P Library Assistant |
| Date Deposited: | 14 Jun 2019 06:16 |
| Last Modified: | 14 Jun 2019 06:16 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/3044 |
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