50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs

Praveen, K. C. and Pushpa, N. and Tripathi, A. and Revannasiddaiah, D. and Cressler, J. D. and Gnana Prakash, A. P. (2011) 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs. Radiation Effects and Defects in Solids, 166 (8-9, S). pp. 710-717. ISSN 1042-0150

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Abstract

The total dose effects of 50 MeV lithium (Li3+) ions on 200 GHz (8 HP) silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are studied in total doses ranging from 300 krad to 10 Mrad. The different electrical characteristics, such as the Gummel characteristics, dc current gain (h(FE)), neutral base recombination, avalanche multiplication of carriers (M - 1) and output characteristics (I-C-V-CE), were studied before and after Li3+ ion irradiation. The results of 50 MeV Li3+ ion irradiation on SiGe HBTs are compared with Co-60 gamma irradiation results in the same dose ranges.

Item Type:	Article
Additional Information:	International Conference on Swift Heavy Ions in Materials Engineering and Characterization (SHIMEC 2010), Inter Univ Accelerator Ctr (IUAC), New Delhi, INDIA, OCT 06-09, 2010
Uncontrolled Keywords:	SiGe HBT; lithium ion irradiation; EB spacer oxide; STI oxide; current gain
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	Users 23 not found.
Date Deposited:	18 Jun 2019 09:50
Last Modified:	03 Jul 2023 05:45
URI:	http://eprints.uni-mysore.ac.in/id/eprint/2596

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