The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology

Gnana Prakash, A. P. and Cressler, J. D. (2011) The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology. Radiation Effects and Defects in Solids, 166 (8-9, S). pp. 703-709. ISSN 1042-0150

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Abstract

Two thousand arrays of second generation (6HP) silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were exposed to 63 MeV hydrogen ions at a fluence ranging from 1 x 10(12) to 5 x 10(13) cm(-2). The dc electrical measurements, such as Gummel characteristics, excess base current (Delta I(B) = I(Bpost) - I(Bpre)), current gain (h(FE)), neutral base recombination, avalanche multiplication factor (M-1) and output characteristics (V(CE)-I(C)), were systematically studied before and after hydrogen ion irradiation. The SiGe HBT showed 80% degradation in forward-mode dc current gain after a total dose of 5 x 10(13) cm(-2) hydrogen ion irradiation.

Item Type:	Article
Additional Information:	International Conference on Swift Heavy Ions in Materials Engineering and Characterization (SHIMEC 2010), Inter Univ Accelerator Ctr (IUAC), New Delhi, INDIA, OCT 06-09, 2010
Uncontrolled Keywords:	65 GHz SiGe HBT; hydrogen ion irradiation; transconductance; dc current gain
Subjects:	D Physical Science > Physics
Divisions:	Department of > Physics
Depositing User:	Users 23 not found.
Date Deposited:	18 Jun 2019 09:43
Last Modified:	03 Jul 2023 05:47
URI:	http://eprints.uni-mysore.ac.in/id/eprint/2595

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