Persistence photo conductivity in Ni doped CdS

Patidar, M. M. and Ajay, A. and Dewas Wala, A. and Kiran, N. and Panda, R. and Gangrade, M. and Nath, R. and Ganesan, V. (2014) Persistence photo conductivity in Ni doped CdS. Journal of Physics: Conference Series, 534 (1). pp. 1-4. ISSN 1742-6596

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Abstract

Persistence Photo Conductivity (PPC) in Ni-doped Cadmium Sulphide [Cd1−xNixS, (x=0, 0.03, 0.05 and 0.20)] thin films were investigated. While the morphology of the films prepared by Spray Pyrolysis Technique (SPT) were studied using Atomic Force Microscopy (AFM), the PPC has been studied using a low temperature two probe resistivity set up with a photo-diode excitation. Note worthy changes in the morphology were observed upon Ni substitution and is attributed to the strain induced upon substitution. The simple resistivity analysis shows an evolution to a highly resistive state upon increasing the Ni content and may be attributed to the local oxide formation. Ni doping enhances the photo sensitivity of the films that may be tuned for technological applications.

Item Type: Article
Subjects: Physical Sciences > Physics
Divisions: PG Campuses > Manasagangotri, Mysore > Physics
Depositing User: Praveen Kumari B.L
Date Deposited: 29 Apr 2015 06:38
Last Modified: 29 Apr 2015 06:38
URI: http://eprints.uni-mysore.ac.in/id/eprint/17766

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