Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation

Santosh Kumar and Vinay Kumar, M. and Ashish Kumar and Kandasami, Asokan and Krishnaveni, S. (2020) Enhancement of Electrical Parameters of Ni/n-GaN SBDs under Remote and not In-flux Gamma Irradiation. ECS Journal of Solid State Science and Technology, 9 (9).

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Official URL: https://iopscience.iop.org/article/10.1149/2162-87...


Remote and not in-flux gamma irradiation effects have been examined on the cumulative dose ranges from 250 Gy to 1 kGy by current-voltage (I-V) and capacitance-voltage (C-V) characteristics for Ni/n-GaN Schottky barrier diodes (SBDs). The interface and charge transport properties of Ni/n-GaN SBDs are significantly changed after gamma irradiation. In addition, the reverse current conduction mechanism indicates that the emission of Poole-Frenkel is dominant in lower voltages and Schottky emission for different doses at the higher voltage. The electrical parameters, such as barrier height and series resistance, decreases significantly at 500 Gy. Due to the internal irradiation of Compton electrons caused by primary gamma photons, low-dose gamma irradiation reveals the enhancement of device characteristics. Nonetheless, for higher doses of gamma irradiation above 500 Gy, degradation of Ni/n-GaN characteristics was observed.

Item Type: Article
Uncontrolled Keywords: GaN SBDs; Remote and not influx; Gamma irradiation; Electrical parameters; Charge transport mechanism
Subjects: D Physical Science > Physics
Divisions: Department of > Physics
Depositing User: Mr Umendra uom
Date Deposited: 29 Mar 2021 05:58
Last Modified: 07 Jul 2022 10:27
URI: http://eprints.uni-mysore.ac.in/id/eprint/15497

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