The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs.

Pushpa, N. and Praveen, K. C. and Prakash, A. P. G. and Naik, P. S. and Gupta, S. K. and Revannasiddaiah, D. (2012) The influence of 175 MeV Ni13+ ion and Co-60 gamma irradiation effects on subthreshold characteristics of N-channel depletion MOSFETs. AIP Conference Proceedings, 1447 (Pt. 2,). pp. 1043-1044. ISSN 0094-243X

Full text not available from this repository. (Request a copy)

Abstract

N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 175 MeV Ni3+ ions and Co-60 gamma radiation in the dose range of 100 krad to 100 Mrad. The I-V characteristics of MOSFETs were studied systematically before and after ion and gamma irradn. The threshold voltage (VTH) of the irradiated MOSFETs was found to decrease with increase in ion and gamma dose. The more degrdn. was obsd. in the devices irradiated with Co-60 gamma radiation than irradiated with Ni13+ ions at given total doses. (c) 2012 American Institute of Physics. [on SciFinder(R)]

Item Type: Article
Additional Information: Unmapped bibliographic data: PY - 2012/// [EPrints field already has value set] M3 - 10.1063/1.4710363 [Field not mapped to EPrints] JA - AIP Conf. Proc. [Field not mapped to EPrints]
Uncontrolled Keywords: nickel cobalt ion gamma irradn MOSFET subthreshold characteristics
Subjects: Physical Sciences > Physics
Divisions: PG Campuses > Manasagangotri, Mysore > Physics
Depositing User: Kodandarama
Date Deposited: 26 Jun 2013 06:46
Last Modified: 26 Jun 2013 06:46
URI: http://eprints.uni-mysore.ac.in/id/eprint/13066

Actions (login required)

View Item View Item