Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices.

Prakash, A. P. G. and Pushpa, N. and Praveen, K. C. and Naik, P. S. and Revannasiddaiah, D. (2012) Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices. AIP Conference Proceedings, 1447 (Pt. 1,). pp. 489-490. ISSN 0094-243X

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Official URL: http://link.aip.org/link/doi/10.1063/1.4710092

Abstract

In this paper we present the comprehensive results on the effects of different radiation on the elec. characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradn. time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradn. facilities. (c) 2012 American Institute of Physics. [on SciFinder(R)]

Item Type: Article
Additional Information: Unmapped bibliographic data: PY - 2012/// [EPrints field already has value set] M3 - 10.1063/1.4710092 [Field not mapped to EPrints] JA - AIP Conf. Proc. [Field not mapped to EPrints]
Uncontrolled Keywords: pelletron accelerator facility radiation effect semiconductor
Subjects: Physical Sciences > Physics
Divisions: PG Campuses > Manasagangotri, Mysore > Physics
Depositing User: Kodandarama
Date Deposited: 27 Jun 2013 04:12
Last Modified: 27 Jun 2013 04:12
URI: http://eprints.uni-mysore.ac.in/id/eprint/13063

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