Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors

Prakash, A. P. G. (2011) Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors. AIP Conference Proceedings, 1349 (1). pp. 1077-1078.

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Official URL: http://dx.doi.org/10.1063/1.3606235

Abstract

Deep Level Transient Spectroscopy (DLTS) technique is useful tool to study process and radiation induced defects in semiconductor materials and devices. The different types of radiation induced trap levels in the collector base depletion region of the transistors were studied by DLTS technique.

Item Type: Article
Additional Information: Unmapped bibliographic data: PY - 2011/07/15/ [EPrints field already has value set] JA - AIP Conf. Proc. [Field not mapped to EPrints] ED - Garg, Alka B. [Field not mapped to EPrints] ED - Mittal, R. [Field not mapped to EPrints] ED - Mukhopadhyay, R. [Field not mapped to EPrints] JO - AIP Conference Proceedings [Field not mapped to EPrints]
Uncontrolled Keywords: radiation effects, bipolar transistors, traps (ion), electric current measurement, energy loss of particles
Subjects: Physical Sciences > Physics
Divisions: PG Campuses > Manasagangotri, Mysore > Physics
Depositing User: Swamy D
Date Deposited: 22 Jun 2013 11:16
Last Modified: 03 Sep 2013 04:23
URI: http://eprints.uni-mysore.ac.in/id/eprint/12942

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