A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12).

Praveen, K. C. and Pushpa, N. and Tripathi, Ambuj and Revannasiddaiah, D. and Naik, P. S. and Cressler, J. D. and Prakash, A. P. G. (2012) A comparison of 100 MeV oxygen ion and C0-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12). Proceedings of SPIE, 8549 (16th I). 85490J/1-85490J/2. ISSN 0277-786X

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Abstract

We have investigated the total dose effects of 100 MeV Oxygen ion irradn. on the dc elec. characteristics of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs). The results of oxygen ion irradn. were compared with Co-60 gamma irradn. in the same total dose range (1 Mrad to 100 Mrad). The results show that even after 100 Mrad of total dose, the degrdn. in the elec. characteristics of SiGe HBT is acceptable from the circuit design point of view. [on SciFinder(R)]

Item Type: Article
Additional Information: Unmapped bibliographic data: PY - 2012/// [EPrints field already has value set] M3 - 10.1117/12.925195 [Field not mapped to EPrints] JA - Proc. SPIE [Field not mapped to EPrints]
Uncontrolled Keywords: silicon germanium HBT oxygen ion cobalt 60 gamma irradn
Subjects: Physical Sciences > Physics
Divisions: PG Campuses > Manasagangotri, Mysore > Physics
Depositing User: Kodandarama
Date Deposited: 22 Jun 2013 07:43
Last Modified: 19 Jul 2016 05:18
URI: http://eprints.uni-mysore.ac.in/id/eprint/12878

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