Praveen, K. C. and Pushpa, N. and Bharathi, M. N. and Cressler, J. D. and Gnana Prakash, A. P. A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT. In: Physics of Semiconductor Devices. UNSPECIFIED. ISBN 9783319030029
Full text not available from this repository. (Request a copy)| Item Type: | Book Section |
|---|---|
| Subjects: | D Physical Science > Physics |
| Divisions: | Yuvaraj college > Physics |
| Depositing User: | Dhruva Kumar |
| Date Deposited: | 08 Mar 2020 09:31 |
| Last Modified: | 03 Jul 2023 05:48 |
| URI: | http://eprints.uni-mysore.ac.in/id/eprint/11785 |
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